BLF6G10LS-260PRN NXP Semiconductors, BLF6G10LS-260PRN Datasheet

260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz

BLF6G10LS-260PRN

Manufacturer Part Number
BLF6G10LS-260PRN
Description
260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
CAUTION
1.1 General description
1.2 Features and benefits
260 W LDMOS power transistor for base station applications at frequencies from
700 MHz to 1000 MHz.
Table 1.
Typical RF performance at T
[1]
Mode of operation
2-carrier W-CDMA
BLF6G10L-260PRN;
BLF6G10LS-260PRN
Power LDMOS transistor
Rev. 1 — 12 August 2010
Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a
supply voltage of 28 V and an I
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (700 MHz to 1000 MHz)
Internally matched for ease of use
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Average output power = 40 W
Power gain = 22.0 dB
Efficiency = 26.5 %
ACPR = −39 dBc
Typical performance
case
f
(MHz)
920 to 960
= 25
°
Dq
C in a class-AB production test circuit.
of 1800 mA:
V
(V)
28
DS
P
(W)
40
L(AV)
G
(dB)
22.0
p
Product data sheet
η
(%)
26.5
D
ACPR
(dBc)
−39
[1]

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BLF6G10LS-260PRN Summary of contents

Page 1

... BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 1 — 12 August 2010 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP test model DPCH; PAR = 7 0.01 % probability on CCDF per carrier; ...

Page 2

... Pin BLF6G10L-260PRN (SOT539A BLF6G10LS-260PRN (SOT539B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G10L-260PRN BLF6G10LS-260PRN - BLF6G10L-260PRN_LS-260PRN Product data sheet Pinning Description drain1 drain2 gate1 gate2 source drain1 drain2 gate1 gate2 source Ordering information Package Name Description - flanged balanced LDMOST ceramic package; ...

Page 3

... NXP Semiconductors 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg Thermal characteristics Table 5. Symbol R th(j-case) 6. Characteristics Table 6. ° Symbol Parameter V (BR)DSS V GS(th) V GSq I DSS I DSX I GSS DS(on) 7. Application information Table 7. Class-AB production test circuit ...

Page 4

... NXP Semiconductors Table 7. Class-AB production test circuit; PAR 7 0.01 % probability on CCDF; 3GPP test model DPCH Symbol RL in η D ACPR Table 8. Class-AB production test circuit; PAR 7 0.01 % probability on CCDF; 3 GPP test model DPCH; f otherwise specified. ...

Page 5

... NXP Semiconductors 7.3 Typical powersweep 7.3.1 CW (1) % efficiency at 960 MHz (2) % efficiency at 940 MHz (3) % efficiency at 920 MHz (4) dB gain at 940 MHz (5) dB gain at 920 MHz (6) dB gain at 960 MHz Fig 2. (1) dB return loss at 940 MHz (2) dB return loss at 920 MHz (3) dB return loss at 960 MHz Fig 3 ...

Page 6

... NXP Semiconductors 7.3.2 IS95 24.5 ( (2) (dB) (3) 22.5 (4) (5) (6) 20.5 18 (1) % efficiency at 960 MHz (2) % efficiency at 940 MHz (3) % efficiency at 920 MHz (4) dB gain at 940 MHz (5) dB gain at 920 MHz (6) dB gain at 960 MHz a. Gain and efficiency versus P IS95, PAR = 9 0.01% probability of the CCDF. Fig 4. ...

Page 7

... NXP Semiconductors 7.3.3 2C-WCDMA (5 MHz spacing) 24.5 ( (2) (dB) (3) 22.5 20.5 18 (1) % efficiency at 960 MHz (2) % efficiency at 940 MHz (3) % efficiency at 920 MHz (4) dB gain at 940 MHz (5) dB gain at 920 MHz (6) dB gain at 960 MHz a. Gain and efficiency versus P 3GPP, Test Model 1, 64 DPCH, PAR=7 0.01% probability per carrier. 5 MHz carrier spacing. ...

Page 8

... NXP Semiconductors 8. Test information 8.1 Test circuit Figure 6 − NXP BLF6G10L-260PRN C1 Input Rev The above layout shows the test circuit used to measure the devices in production. The RF Power and Base-Stations group can provide a more appropriate application demonstration for specific customer needs. ...

Page 9

... NXP Semiconductors Table 10. Bill of materials …continued Component Description C4, C5, C9, multilayer ceramic chip capacitor ATC 800B C11, C12 multilayer ceramic chip capacitor C1, C10, C14 multilayer ceramic chip capacitor TDK C7, C13 electrolytic capacitor R3, R6 chip resistor copper foil strip standard components: N-connector male N-connector female 4 × ...

Page 10

... NXP Semiconductors 9. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 4.7 11.81 0.18 31.55 31.52 mm 4.2 11.56 30.94 30.96 0.10 0.465 0.185 0.007 1.242 1.241 inches 0.455 0.165 0.004 1.218 1.219 Note 1. millimeter dimensions are derived from the original inch dimensions. ...

Page 11

... NXP Semiconductors Earless flanged balanced LDMOST ceramic package; 4 leads Dimensions (1) Unit max 4.7 11.81 0.18 31.55 mm nom min 4.2 11.56 0.10 30.94 max 0.185 0.465 0.007 1.242 mm nom min 0.165 0.455 0.004 1.218 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version ...

Page 12

... NXP Semiconductors 10. Abbreviations Table 11. Acronym 3GPP CCDF CDMA CW DPCH EDGE GSM LDMOS LDMOST PAR RF VSWR W-CDMA BLF6G10L-260PRN_LS-260PRN Product data sheet Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Code Division Multiple Access Continuous Wave Dedicated Physical CHannel Enhanced Data rates for GSM Evolution ...

Page 13

... NXP Semiconductors 11. Revision history Table 12. Revision history Document ID BLF6G10L-260PRN_LS-260PRN v.1 BLF6G10L-260PRN_LS-260PRN Product data sheet BLF6G10L(S)-260PRN Release date Data sheet status 20100812 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2010 Power LDMOS transistor Change notice ...

Page 14

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...

Page 15

... Product data sheet NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 16

... NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Application information 7.1 Ruggedness in class-AB operation . . . . . . . . . 4 7.2 Impedance information . . . . . . . . . . . . . . . . . . . 4 7.3 Typical powersweep . . . . . . . . . . . . . . . . . . . . . 5 7.3 7.3.2 IS95 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.3.3 2C-WCDMA (5 MHz spacing Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 8 ...

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