BLF6G27LS-75 NXP Semiconductors, BLF6G27LS-75 Datasheet

BLF6G27LS-75

Manufacturer Part Number
BLF6G27LS-75
Description
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
CAUTION
1.1 General description
1.2 Features
75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz
to 2700 MHz.
Table 1.
RF performance at T
[1]
[2]
I
I
I
I
I
I
I
I
Mode of operation
1-carrier N-CDMA
BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
Rev. 01 — 22 October 2009
Typical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync
and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and
2700 MHz, a supply voltage of 28 V and an I
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2500 MHz to 2700 MHz)
Internally matched for ease of use
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
Measured within 30 kHz bandwidth.
N
N
N
N
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Average output power = 9 W
Power gain = 17 dB
Drain efficiency = 23 %
ACPR
Typical performance
885
= 50.0 dBc in 30 kHz bandwidth
[1]
case
f
(MHz)
2500 to 2700
= 25 C in a class-AB production test circuit.
V
(V)
28
DS
P
(W)
9
L(AV)
Dq
P
(W)
75
of 600 mA:
L(M)
G
(dB) (%) (dBc)
17
p
23
D
Product data sheet
ACPR
50
[2]
885k
ACPR
(dBc)
60
[2]
1980k

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BLF6G27LS-75 Summary of contents

Page 1

... BLF6G27-75; BLF6G27LS-75 WiMAX power LDMOS transistor Rev. 01 — 22 October 2009 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. RF performance at T Mode of operation 1-carrier N-CDMA [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9 ...

Page 2

... Applications I RF power amplifiers for base stations and multicarrier applications in the 2500 MHz to 2700 MHz frequency range 2. Pinning information Table 2. Pin BLF6G27-75 (SOT502A BLF6G27LS-75 (SOT502B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G27-75 BLF6G27LS-75 4. Limiting values Table 4 ...

Page 3

... ACPR 885k ACPR 1980k P L(M) [1] Measured within 30 kHz bandwidth. [2] Measured at 2.7 GHz and 3 dB compression of the CCDF at 0.01 % probability. BLF6G27-75_6G27LS-75_1 Product data sheet BLF6G27-75; BLF6G27LS-75 Thermal characteristics Parameter Conditions thermal resistance from T case junction to case (CW) L Characteristics Conditions drain-source breakdown V voltage ...

Page 4

... NXP Semiconductors 7.1 Ruggedness in class-AB operation The BLF6G27-75 and BLF6G27LS-75 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 7.2 One-tone (dB) 18 (1) ( 600 mA ( 2500 MHz ...

Page 5

... 600 mA ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 5. Adjacent channel power ratio (885 kHz function of load power; typical values BLF6G27-75_6G27LS-75_1 Product data sheet BLF6G27-75; BLF6G27LS-75 001aak976 (%) (W) L Fig 4. 001aak978 ACPR (dBc ...

Page 6

... 600 mA ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 9. Adjacent channel power ratio (5 MHz function of load power; typical values BLF6G27-75_6G27LS-75_1 Product data sheet BLF6G27-75; BLF6G27LS-75 001aak980 (%) (W) L Fig 8. 001aak982 ACPR (dBc ...

Page 7

... MHz ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 13. Adjacent channel power ratio (5 MHz function of load power; typical values BLF6G27-75_6G27LS-75_1 Product data sheet BLF6G27-75; BLF6G27LS-75 001aak984 (%) (W) L Fig 12. Drain efficiency as a function of load power; ...

Page 8

... NXP Semiconductors 8. Test information 8.1 Impedance information Table 8. Typical values per section unless otherwise specified. f GHz 2.5 2.6 2.7 Fig 15. Definition of transistor impedance 8.2 Test circuit C1 Fig 16. Component layout BLF6G27-75_6G27LS-75_1 Product data sheet BLF6G27-75; BLF6G27LS-75 Typical impedance Z S 5.3 j7.7 8.7 j8.7 12.2 + j0.4 gate BLF6G27-75 INPUT REV2 ...

Page 9

... R1, R2 [1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. BLF6G27-75_6G27LS-75_1 Product data sheet BLF6G27-75; BLF6G27LS-75 List of components for component layout. Description ferrite bead multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor ...

Page 10

... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.186 0.505 0.788 0.006 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502A Fig 17. Package outline SOT502A BLF6G27-75_6G27LS-75_1 Product data sheet BLF6G27-75; BLF6G27LS- scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9.30 9 ...

Page 11

... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.186 0.505 0.788 0.006 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502B Fig 18. Package outline SOT502B BLF6G27-75_6G27LS-75_1 Product data sheet BLF6G27-75; BLF6G27LS- scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9 ...

Page 12

... WiMAX 11. Revision history Table 11. Revision history Document ID Release date BLF6G27-75_6G27LS-75_1 20091022 BLF6G27-75_6G27LS-75_1 Product data sheet BLF6G27-75; BLF6G27LS-75 Abbreviations Description Complementary Cumulative Distribution Function Continuous Wave Interim Standard 95 Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Narrowband Code Division Multiple Access ...

Page 13

... For more information, please visit: For sales office addresses, please send an email to: BLF6G27-75_6G27LS-75_1 Product data sheet BLF6G27-75; BLF6G27LS-75 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...

Page 14

... Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13 Contact information Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 BLF6G27-75; BLF6G27LS-75 WiMAX power LDMOS transistor Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp ...

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