BLF7G27L-100 NXP Semiconductors, BLF7G27L-100 Datasheet - Page 7
![100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz](/photos/41/53/415337/sot502a_3d_sml.gif)
BLF7G27L-100
Manufacturer Part Number
BLF7G27L-100
Description
100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
Manufacturer
NXP Semiconductors
Datasheet
1.BLF7G27L-100.pdf
(14 pages)
NXP Semiconductors
BLF7G27L-100_7G27LS-100
Product data sheet
Fig 9.
(dB)
G
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
p
19
18
17
16
0
V
Single carrier W-CDMA power gain as a
function of average output power;
typical values
DS
= 28 V; I
7.4 Single carrier W-CDMA
(3)
(1)
(2)
Dq
10
= 900 mA.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
Channel bandwidth is 3.84 MHz.
20
P
L(AV)
All information provided in this document is subject to legal disclaimers.
001aan546
(W)
BLF7G27L-100; BLF7G27LS-100
30
Rev. 3 — 22 July 2011
Fig 10. Single carrier W-CDMA drain efficiency as a
(%)
η
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
D
40
30
20
10
0
0
V
function of average output power;
typical values
DS
= 28 V; I
Dq
10
= 900 mA.
Power LDMOS transistor
20
P
L(AV)
© NXP B.V. 2011. All rights reserved.
001aan547
(W)
(1)
(2)
(3)
30
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