BLF7G27L-90P NXP Semiconductors, BLF7G27L-90P Datasheet - Page 11

• Manufacturer Part Number: BLF7G27L-90P
• Description: 90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
9. Abbreviations
10. Revision history
Table 9.
BLF7G27L-90P_BLF7G27LS-90P
Product data sheet
Document ID
BLF7G27L-90P_BLF7G27LS-90P v.2 20111110
Modifications:
BLF7G27L-90P_BLF7G27LS-90P v.1 20101102
Revision history
Table 8.
Acronym
3GPP
CCDF
CW
DPCH
IS-95
ESD
LDMOS
LDMOST
N-CDMA
PAR
RF
VSWR
W-CDMA
Abbreviations
Release date Data sheet status
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All information provided in this document is subject to legal disclaimers.
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
Interim Standard 95
ElectroStatic Discharge
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Narrowband Code Division Multiple Access
Peak-to-Average power Ratio
Radio Frequency
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
Table 1 on page
W-CDMA.
Table 5 on page
Table 6 on page
Table 7 on page
Section 7.1 on page
Section 7.2 on page
Section 7.3 on page
Section 7.4 on page
BLF7G27L-90P; BLF7G27LS-90P
Rev. 2 — 10 November 2011
Product data sheet
Objective data sheet -
1: Some values have been changed; added row: Single carrier
3: Some values have been changed.
3: Some values have been changed/added.
3: Some values have been changed.
3: Some values have been changed.
4: Graphs have been added.
6: Graphs have been added.
7: Graphs have been added.
-
Change notice Supersedes
Power LDMOS transistor
BLF7G27L-90P_BLF7G27L
S-90P v.1
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© NXP B.V. 2011. All rights reserved.
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