BLF7G27LS-100 NXP Semiconductors, BLF7G27LS-100 Datasheet - Page 8

• Manufacturer Part Number: BLF7G27LS-100
• Description: 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G27L-100_7G27LS-100
Product data sheet
Fig 11. Single carrier W-CDMA ACPR at 5 MHz as a
Fig 13. Single carrier W-CDMA peak-to-average power
ACPR
(dBc)
PAR
(dB)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
−30
−40
−50
−60
−70
5M
8
7
6
5
0
V
function of average output power;
typical values
0
V
ratio as a function of average output power;
typical values
DS
DS
= 28 V; I
= 28 V; I
Dq
Dq
10
10
= 900 mA.
= 900 mA.
20
20
(1)
(2)
(3)
P
P
L(AV)
L(AV)
All information provided in this document is subject to legal disclaimers.
001aan548
001aan550
(W)
(W)
(1)
(2)
(3)
BLF7G27L-100; BLF7G27LS-100
30
30
Rev. 3 — 22 July 2011
Fig 12. Single carrier W-CDMA ACPR at 10 MHz as a
Fig 14. Single carrier W-CDMA peak output power as a
ACPR
(dBc)
P
(W)
L(M)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
−50
−60
−70
−80
160
120
10M
80
40
0
0
0
V
function of average output power;
typical values
V
function of average output power;
typical values
DS
DS
= 28 V; I
= 28 V; I
(1)
(2)
(3)
Dq
Dq
10
10
= 900 mA.
= 900 mA.
Power LDMOS transistor
20
20
P
P
L(AV)
L(AV)
© NXP B.V. 2011. All rights reserved.
001aan549
001aan551
(W)
(W)
(1)
(2)
(3)
30
30
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