BLF7G27LS-75P NXP Semiconductors, BLF7G27LS-75P Datasheet - Page 6

• Manufacturer Part Number: BLF7G27LS-75P
• Description: 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G27L-75P_BLF7G27LS-75P
Product data sheet
Fig 9.
Fig 11. Single carrier W-CDMA ACPR at 5 MHz and at
ACPR
(dBc)
(dB)
G
18.0
17.6
17.2
16.8
16.4
16.0
−20
−30
−40
−50
−60
−70
p
0
V
Single carrier W-CDMA power gain and drain
efficiency as function of load power;
typical values
0
V
10 MHz as function of load power;
typical values
DS
DS
= 28 V; I
= 28 V; I
G
η
7.4 Single carrier W-CDMA
D
p
10
10
Dq
Dq
= 650 mA; f = 2300 MHz.
= 650 mA; f = 2300 MHz.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
Channel bandwidth is 3.84 MHz.
20
20
30
30
ACPR
ACPR
All information provided in this document is subject to legal disclaimers.
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P
P
L
L
10M
5M
(W)
(W)
BLF7G27L-75P; BLF7G27LS-75P
40
40
Rev. 2 — 14 July 2010
50
40
30
20
10
0
(%)
η
D
Fig 10. Single carrier W-CDMA power gain and drain
Fig 12. Single carrier W-CDMA ACPR at 5 MHz and at
ACPR
(dBc)
(dB)
G
18.0
17.6
17.2
16.8
16.4
16.0
−20
−30
−40
−50
−60
−70
p
0
0
V
efficiency as function of load power;
typical values
V
10 MHz as function of load power;
typical values
DS
DS
= 28 V; I
= 28 V; I
G
η
D
p
10
10
Dq
Dq
= 650 mA; f = 2400 MHz.
= 650 mA; f = 2400 MHz.
20
20
Power LDMOS transistor
30
30
ACPR
ACPR
© NXP B.V. 2010. All rights reserved.
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P
P
L
L
10M
5M
(W)
(W)
40
40
50
40
30
20
10
0
(%)
η
D
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