TMBYV10-40 STMicroelectronics, TMBYV10-40 Datasheet - Page 2

• Manufacturer Part Number: TMBYV10-40
• Description: Small Signal Schottky Diode
• Manufacturer: STMicroelectronics

Fig. 1 : Forward current versus forward voltage
at low level (typical values).
TMBYV10-40
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
* * Pulse test: t
DYNAMIC CHARACTERISTICS
Forward current flow in a Schottky rectifier is due
to majority carrier conduction. So reverse recovery
is not affected by storage charge as in conventional
PN junction diodes.
Nevertheless, when the device switches from for-
ward biased condition to reverse blocking state,
current is required to charge the depletion capaci-
tance of the diode.
2/4
Symbol
Synbol
V
I
R
C
F
*
*
T
T
I
I
p
T
F
F
j
j
j
= 25 C
= 100 C
= 1A
= 3A
= 25 C
300 s
2%.
Test Conditions
Test Conditions
V
T
j
R
= 25 C
= V
V
R
RRM
= 0
This current depends only of diode capacitance and
external circuit impedance. Satisfactory circuit be-
haviour analysis may be performed assuming that
Schottky rectifier consists of an ideal diode in par-
allel with a variable capacitance equal to the junc-
tion capacitance (see fig. 5 page 4/4).
Fig. 2 : Forward current versus forward voltage
at high level (typical values).
Min.
Min.
Typ.
Typ.
220
Max.
Max.
0.55
0.85
0.5
10
Unit
Unit
mA
pF
V