STR910FAZ32 STMicroelectronics, STR910FAZ32 Datasheet - Page 92
STR910FAZ32
Manufacturer Part Number
STR910FAZ32
Description
32-bit MCU
Manufacturer
STMicroelectronics
Datasheet
1.STR911FAW47.pdf
(102 pages)
Specifications of STR910FAZ32
Arm966e-s Risc Core
Harvard architecture, 5-stage pipeline, Tightly-Coupled Memories (SRAM and Flash)
Available stocks
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Quantity
Price
Company:
Part Number:
STR910FAZ32H6
Manufacturer:
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Quantity:
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Electrical characteristics
Figure 33. ADC conversion characteristics
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1. Legend:
Equation 1
1LSB
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
E
E
E
E
E
correlation line.
1023
1022
1021
T
O
G
D
L
IDEAL
= Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves.
= Integral Linearity Error: maximum deviation between any actual transition and the end point
= Differential Linearity Error: maximum deviation between actual steps and the ideal one.
= Offset Error: deviation between the first actual transition and the first ideal one.
= Gain Error: deviation between the last ideal transition and the last actual one.
7
6
5
4
3
2
1
0
AV
SS
=
Digital Result
V
---------------------------------- -
1
DDA
E
O
1024
2
–
V
SSA
3
4
Doc ID 13495 Rev 6
5
1 LSB
E
6
T
IDEAL
E
7
L
(2)
E
D
1021 1022 1023 1024
(3)
(1)
E
G
AV
DD
V
STR91xFAxxx
in
(LSB
IDEAL
)
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