AP0603GM Advanced Power Electronics Corp., AP0603GM Datasheet

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... Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 Parameter Parameter 3 AP0603GM RoHS-compliant Product BV 30V DSS R 6mΩ DS(ON) I 16. Rating Units 30 +20 16 2.5 -55 to 150 ...

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... AP0603GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

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... =10V G 1.4 0.9 0 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 = 1.2 0.8 0.4 0.0 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP0603GM 150 7.0 V 6 =4. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 ...

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... AP0603GM Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11 ...