AP0903GYT-HF Advanced Power Electronics Corp., AP0903GYT-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP0903GYT-HF

Manufacturer Part Number
AP0903GYT-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP0903GYT-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
9
Rds(on) / Max(m?) Vgs@4.5v
16
Qg (nc)
8.7
Qgs (nc)
1.7
Qgd (nc)
5
Id(a)
16
Pd(w)
3.5
Configuration
Single N
Package
PMPAK 3x3

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP0903GYT-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Simple Drive Requirement
▼ Good Thermal Dissipation
▼ Low On-resistance
▼ RoHS Compliant & Halogen-Free
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK
and low 1.0mm profile with backside heat sink.
V
V
I
I
I
P
T
T
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
®
3x3 package is special for DC-DC converters application
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
3
Halogen-Free Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
S
+20
3.5
30
16
13
40
DS(ON)
AP0903GYT-HF
S
DSS
S
Value
G
35
PMPAK
D
D
®
201009214
9mΩ
D
3x3
Units
Units
℃/W
30V
16A
W
D
V
V
A
A
A
1

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AP0903GYT-HF Summary of contents

Page 1

... T Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter 3 AP0903GYT-HF Halogen-Free Product BV 30V DSS R 9mΩ DS(ON) I 16A □ ® ...

Page 2

... AP0903GYT-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.0 I =10A D V =10V G 1.6 1.2 0.8 0.4 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 = 1.2 0.8 0.4 1 1.2 -50 T Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP0903GYT- =150 C A 10V 7.0V 6.0V 5.0V V =4.0V G 2.0 4.0 6 Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 ...

Page 4

... AP0903GYT- =10A D V =15V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS( Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...

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