AP1004CMX Advanced Power Electronics Corp., AP1004CMX Datasheet - Page 4
AP1004CMX
Manufacturer Part Number
AP1004CMX
Description
The AP1004CMX used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP1004CMX.pdf
(4 pages)
Specifications of AP1004CMX
Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
1.8
Rds(on) / Max(m?) Vgs@4.5v
3.2
Qg (nc)
31.5
Qgs (nc)
5.3
Qgd (nc)
15.3
Id(a)
32
Pd(w)
2.8
Configuration
Single N
Package
GreenFET-MX
AP1004CMX
1000
0.01
100
0.1
10
10
8
6
4
2
0
1
0.01
Fig 11. Switching Time Waveform
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Operation in this area
limited by R
Single Pulse
V
T
10%
90%
I
V
V
DS
A
D
DS
GS
=25
=25A
=13V
DS(ON)
o
V
C
Q
DS
20
0.1
t
G
d(on)
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
t
r
40
1
t
d(off)
60
10
t
f
100ms
100us
10ms
1ms
DC
1s
80
100
Fig10. Effective Transient Thermal Impedance
0.0001
0.001
5000
4000
3000
2000
1000
0.01
0.1
0.00001
0
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
Duty factor = 0.5
Single Pulse
0.0001
G
0.01
0.05
0.02
5
0.2
0.1
Q
V
DS
GS
0.001
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.01
Q
Q
13
Charge
G
GD
0.1
17
P
DM
Duty Factor = t/T
Peak T
Rthja = 45℃/W
1
21
j
= P
t
DM
T
x R
f=1.0MHz
10
thjc
25
C
C
C
+ T
Q
C
iss
oss
rss
100
29
4