AP2533GY-HF Advanced Power Electronics Corp., AP2533GY-HF Datasheet - Page 5
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AP2533GY-HF
Manufacturer Part Number
AP2533GY-HF
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP2533GY-HF.pdf
(7 pages)
Specifications of AP2533GY-HF
Vds
16V
Vgs
±8V
Rds(on) / Max(m?) Vgs@10v
150
Rds(on) / Max(m?) Vgs@4.5v
230
Rds(on) / Max(m?) Vgs@2.5v
450
Qg (nc)
6.5
Qgs (nc)
0.5
Qgd (nc)
1.5
Id(a)
2.2
Pd(w)
1.14
Configuration
Complementary N-P
Package
OT-26
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP2533GY-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
N-Channel
0.01
0.1
10
8
6
4
2
0
1
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Operation in this area
10%
limited by R
90%
V
V
Single Pulse
GS
T
DS
I
V
D
A
DS
2
DS(ON)
=25
= 2 A
V
= 10 V
DS
t
o
Q
d(on)
C
, Drain-to-Source Voltage (V)
G
4
1
, Total Gate Charge (nC)
t
r
6
10
8
t
d(off)
100ms
100us
10ms
1ms
DC
1s
t
f
10
100
12
Fig 10. Effective Transient Thermal Impedance
0.001
0.01
500
400
300
200
100
0.1
0.0001
1
0
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
0.02
Single Pulse
0.05
0.01
0.2
Duty factor=0.5
0.1
G
0.001
V
5
Q
DS
GS
t , Pulse Width (s)
, Drain-to-Source Voltage (V)
0.01
Q
9
Q
G
GD
Charge
0.1
AP2533GY-HF
13
P
DM
1
Duty factor = t/T
Peak T
R
thja
= 180℃/W
t
j
= P
T
DM
17
f=1.0MHz
C
C
C
x R
10
oss
rss
iss
thja
+ T
Q
a
100
21
5