AP2533GY-HF Advanced Power Electronics Corp., AP2533GY-HF Datasheet - Page 5

• Manufacturer Part Number: AP2533GY-HF
• Description: Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2533GY-HF

• Vds: 16V
• Vgs: ±8V
• Rds(on) / Max(m?) Vgs@10v: 150
• Rds(on) / Max(m?) Vgs@4.5v: 230
• Rds(on) / Max(m?) Vgs@2.5v: 450
• Qg (nc): 6.5
• Qgs (nc): 0.5
• Qgd (nc): 1.5
• Id(a): 2.2
• Pd(w): 1.14
• Configuration: Complementary N-P
• Package: OT-26

N-Channel
0.01
0.1
10
8
6
4
2
0
1
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Operation in this area
10%
limited by R
90%
V
V
Single Pulse
GS
T
DS
I
V
D
A
DS
2
DS(ON)
=25
= 2 A
V
= 10 V
DS
t
o
Q
d(on)
C
, Drain-to-Source Voltage (V)
G
4
1
, Total Gate Charge (nC)
t
r
6
10
8
t
d(off)
100ms
100us
10ms
1ms
DC
1s
t
f
10
100
12
Fig 10. Effective Transient Thermal Impedance
0.001
0.01
500
400
300
200
100
0.1
0.0001
1
0
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
0.02
Single Pulse
0.05
0.01
0.2
Duty factor=0.5
0.1
G
0.001
V
5
Q
DS
GS
t , Pulse Width (s)
, Drain-to-Source Voltage (V)
0.01
Q
9
Q
G
GD
Charge
0.1
AP2533GY-HF
13
P
DM
1
Duty factor = t/T
Peak T
R
thja
= 180℃/W
t
j
= P
T
DM
17
f=1.0MHz
C
C
C
x R
10
oss
rss
iss
thja
+ T
Q
a
100
21
5