AP2605GY Advanced Power Electronics Corp., AP2605GY Datasheet

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device

AP2605GY

Manufacturer Part Number
AP2605GY
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP2605GY

Vds
-30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
80
Rds(on) / Max(m?) Vgs@4.5v
120
Qg (nc)
5.5
Qgs (nc)
1
Qgd (nc)
2.6
Id(a)
-4
Pd(w)
2
Configuration
Single P
Package
SOT-26

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP2605GY
Manufacturer:
Advanced
Quantity:
45 000
Part Number:
AP2605GY-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Fast Switching Characteristic
▼ Lower Gate Charge
▼ Small Footprint & Low Profile Package
▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-26 package is widely used for commercial-industrial
applications.
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
SOT-26
D
D
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
3
D
Halogen-Free Product
G
-55 to 150
-55 to 150
Rating
BV
R
I
0.016
D
-3.3
+20
-30
-20
DS(ON)
-4
G
2
DSS
AP2605GY-HF
Value
62.5
D
S
80mΩ
200807082
-30V
Units
W/℃
℃/W
- 4A
Unit
W
V
V
A
A
A
1

Related parts for AP2605GY

AP2605GY Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SOT-26 D Parameter Parameter 3 AP2605GY-HF Halogen-Free Product BV -30V DSS R 80mΩ DS(ON Rating Units -30 + ...

Page 2

... AP2605GY-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... I = - -10V 1.4 G 1.2 1.0 0.8 0 -50 Fig 4. Normalized On-Resistance 2 1.5 1 0.5 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP2605GY- 150 -7.0V -5.0V -4.5V V =-3. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

Page 4

... AP2605GY- =-24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : SOT- Part Marking Information & Packing : SOT-26 Y5YY SYMBOLS 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Number : Y5 Date Code YY:2004,2008,2012… YY:2003,2007,2011… YY:2002,2006,2010… YY:2001,2005,2009… ...

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