AP2625GY Advanced Power Electronics Corp., AP2625GY Datasheet

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device

AP2625GY

Manufacturer Part Number
AP2625GY
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP2625GY

Vds
-30V
Vgs
±12V
Rds(on) / Max(m?) Vgs@4.5v
185
Rds(on) / Max(m?) Vgs@2.5v
265
Qg (nc)
4
Qgs (nc)
0.5
Qgd (nc)
2
Id(a)
-2
Pd(w)
1.2
Configuration
Dual P
Package
SOT-26

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP2625GY-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Low Gate Charge
▼ Low Gate Drive
▼ Surface Mount Package
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-26 package is widely used for commercial-industrial applications.
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
G1
Parameter
Parameter
1
3
3
D1
S1
G2
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
3
D2
S2
RoHS-compliant Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
0.01
SOT-26
-2.0
-1.6
±12
-30
-20
1.2
DS(ON)
D1
DSS
Value
110
S1
AP2625GY
D2
G1
201023073-1/4
185mΩ
S2
-30V
- 2A
Units
W/℃
℃/W
Unit
W
G2
V
V
A
A
A

Related parts for AP2625GY

AP2625GY Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter AP2625GY RoHS-compliant Product BV D2 DSS R 185mΩ DS(ON SOT-26 G1 Rating -30 ± ...

Page 2

... AP2625GY Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 1.4 1.2 1.0 0.8 0 -50 Fig 4. Normalized On-Resistance 1.8 1.4 1.0 o =25 C 0.6 0.2 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. AP2625GY -7.0V -5.0V -4. 2 Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

Page 4

... AP2625GY =-24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : SOT- Part Marking Information & Packing : SOT-26 Y9XX SYMBOLS 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Number Date Code Millimeters MIN NOM MAX A 2.70 2.90 3.10 B 2.60 2.80 3.00 C 1.40 1.60 1.80 D 0.30 0.43 0.55 E 0.00 0.05 0.10 H 1.20REF G 1 ...

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