AP3310GJ Advanced Power Electronics Corp., AP3310GJ Datasheet - Page 3

• Manufacturer Part Number: AP3310GJ
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP3310GJ

• Vds: -20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@4.5v: 150
• Rds(on) / Max(m?) Vgs@2.5v: 250
• Qg (nc): 6
• Qgs (nc): 1.5
• Qgd (nc): 0.6
• Id(a): -10
• Pd(w): 25
• Configuration: Single P
• Package: TO-251

800
600
400
200
24
18
12
0
6
0
0.0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
T
C
=25
o
2
C
-V
2.5
DS
, Drain-to-Source Voltage (V)
4
-V
5.0
GS
(V)
6
I
T
D
C
= -2.8A
=25
7.5
o
V
8
C
GS
-4.0V
-3.0V
-4.5V
-3.5V
-2.5V
= -2.0V
10.0
10
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
1.8
1.5
1.2
0.9
0.6
20
15
10
5
0
-50
0
T
I
V
D
C
GS
= -2.8A
=150
= -4.5V
o
C
-V
0
2
T
DS
v.s. Junction Temperature
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
50
4
AP3310GH/J
100
o
6
C)
V
GS
-4.0V
-3.0V
-4.5V
-3.5V
-2.5V
= -2.0V
150
8
3