AP3310GJ-HF Advanced Power Electronics Corp., AP3310GJ-HF Datasheet - Page 4

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness

AP3310GJ-HF

Manufacturer Part Number
AP3310GJ-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP3310GJ-HF

Vds
-20V
Vgs
±12V
Rds(on) / Max(m?) Vgs@4.5v
150
Rds(on) / Max(m?) Vgs@2.5v
250
Qg (nc)
6
Qgs (nc)
1.5
Qgd (nc)
0.6
Id(a)
-10
Pd(w)
25
Configuration
Single P
Package
TO-251
AP3310GH/J-HF
100
10
10
8
6
4
2
0
1
25
1
Fig 7. Maximum Safe Operating Area
Single Pulse
T
Fig 5. Maximum Drain Current v.s.
C
=25 °C
50
Case Temperature
T
c
, Case Temperature (
75
-V
DS
10
(V)
100
1ms
10ms
100ms
DC
o
C)
125
100
150
Fig 8. Effective Transient Thermal Impedance
0.01
0.1
30
25
20
15
10
0.00001
5
0
1
0
Fig 6. Typical Power Dissipation
Duty Factor = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
0.0001
T
c
50
, Case Temperature (
t , Pulse Width (s)
0.001
0.01
100
P
DM
Duty Factor = t/T
Peak T
o
C)
j
= P
t
0.1
DM
T
x R
thjc
+ T
C
150
1
4

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