AP3R303GMT-HF Advanced Power Electronics Corp., AP3R303GMT-HF Datasheet - Page 4

• Manufacturer Part Number: AP3R303GMT-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP3R303GMT-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 3.3
• Rds(on) / Max(m?) Vgs@4.5v: 5
• Qg (nc): 13.3
• Qgs (nc): 2.5
• Qgd (nc): 7.2
• Id(a): 105
• Pd(w): 56.8
• Configuration: Single N
• Package: PMPAK 5x6

AP3R303GMT-HF
1000
100
10
1
8
6
4
2
0
0.1
0
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Fig 7. Gate Charge Characteristics
10%
90%
I
Single Pulse
V
T
D
V
C
GS
=30A
DS
=25
4
o
V
Q
V
C
DS
t
V
G
DS
d(on)
V
DS
,Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
=15V
DS
8
1
=18V
=24V
t
r
12
16
10
t
d(off)
t
20
f
100ms
100us
10ms
1ms
DC
24
100
Fig 10. Effective Transient Thermal Impedance
2000
1600
1200
0.01
800
400
0.1
0.00001
0
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
0.05
0.02
V
Duty factor = 0.5
0.01
0.1
0.2
G
5
Single Pulse
0.0001
Q
V
GS
DS
9
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
Q
13
Charge
G
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
21
j
= PDM x R
t
0.1
T
f=1.0MHz
25
thjc
Q
+ T
C
C
C
c
iss
oss
rss
1
29
4