AP4230GM-HF Advanced Power Electronics Corp., AP4230GM-HF Datasheet - Page 3

• Manufacturer Part Number: AP4230GM-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4230GM-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 25
• Rds(on) / Max(m?) Vgs@4.5v: 45
• Qg (nc): 4.2
• Qgs (nc): 1.1
• Qgd (nc): 2.5
• Id(a): 7
• Pd(w): 2
• Configuration: Dual N
• Package: SO-8

40
30
20
10
50
42
34
26
18
0
8
6
4
2
0
2
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
1
V
Reverse Diode
V
V
DS
GS
SD
4
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
T
0.4
2
j
=150
T
o
A
C
0.6
6
3
= 25
I
T
D
A
= 5 A
=25
o
C
0.8
4
℃
T
8
j
=25
V
1
5
G
o
= 4.0V
C
5.0V
7.0V
6.0V
10V
1.2
10
6
2.0
1.6
1.2
0.8
0.4
1.4
1.2
1.0
0.8
0.6
0.4
40
30
20
10
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
D
G
= 7 A
=10V
1
v.s. Junction Temperature
Junction Temperature
T
V
T
j
DS
0
, Junction Temperature (
0
j
, Junction Temperature (
, Drain-to-Source Voltage (V)
2
T
A
3
50
50
= 150
AP4230GM-HF
o
C
4
o
100
100
C)
o
C)
V
G
5
= 4.0 V
5.0V
7.0V
6.0V
10V
6
150
150
3