AP4413GM Advanced Power Electronics Corp., AP4413GM Datasheet - Page 3

• Manufacturer Part Number: AP4413GM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4413GM

• Vds: -20V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 30
• Rds(on) / Max(m?) Vgs@4.5v: 40
• Rds(on) / Max(m?) Vgs@2.5v: 65
• Qg (nc): 17
• Qgs (nc): 4
• Qgd (nc): 7
• Id(a): -7.8
• Pd(w): 2.5
• Configuration: Single P
• Package: SO-8

120
100
80
60
40
20
70
60
50
40
30
20
10
0
7
6
5
4
3
2
1
0
1
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
A
T
= 25
1
j
0.2
=150
-V
-V
Reverse Diode
3
-V
o
DS
GS
C
2
o
SD
, Drain-to-Source Voltage (V)
C
0.4
, Gate-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
3
5
0.6
4
0.8
7
5
I
T
D
A
T
= - 4 A
1
=25 ℃ ℃ ℃ ℃
j
6
V
=25
G
9
= - 2.5 V
o
1.2
-5.0V
-4.5V
C
7
-10V
-7.0V
11
1.4
8
1.6
1.4
1.2
1.0
0.8
0.6
90
80
70
60
50
40
30
20
10
0
3
2
1
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
V
I
A
D
G
1
= 150
= - 7 A
=-10V
-V
v.s. Junction Temperature
Junction Temperature
T
T
j
j
DS
o
, Junction Temperature (
, Junction Temperature (
2
0
0
C
, Drain-to-Source Voltage (V)
3
50
50
4
5
AP4413GM
o
o
100
100
6
C)
C)
V
G
= - 2.5 V
7
-5.0V
-7.0V
-4.5V
-10V
150
150
8