AP4412GM Advanced Power Electronics Corp., AP4412GM Datasheet - Page 4

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness

AP4412GM

Manufacturer Part Number
AP4412GM
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4412GM

Vds
25V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
33
Rds(on) / Max(m?) Vgs@4.5v
60
Qg (nc)
7
Qgs (nc)
1.5
Qgd (nc)
5
Id(a)
7
Pd(w)
2.5
Configuration
Single N
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP4412GM
Manufacturer:
APEC
Quantity:
25 000
Part Number:
AP4412GM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
AP4412GM
0.01
100
0.1
10
1
8
7
6
5
4
3
2
1
0
0.1
25
Fig 7. Maximum Safe Operating Area
Fig 5. Maximum Drain Current v.s.
Single Pulse
T
C
=25
50
o
Case Temperature
T
C
c
, Case Temperature (
1
75
V
DS
(V)
100
10
o
C)
125
1ms
10ms
100ms
1s
10s
DC
150
100
Fig 8. Effective Transient Thermal Impedance
0.001
0.01
0.1
1
0.0001
3
2
1
0
0
Fig 6. Typical Power Dissipation
0.05
0.02
0.01
Duty Factor = 0.5
0.2
0.1
0.001
Single Pulse
T
0.01
c ,
t , Pulse Width (s)
Case Temperature (
50
0.1
1
100
P
DM
Duty Factor = t/T
Peak T
R
o
10
thja
C)
=125
j
= P
t
o
C/W
DM
T
x R
100
thja
+ T
a
150
1000
4/6

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