AP4501AGM Advanced Power Electronics Corp., AP4501AGM Datasheet - Page 4

• Manufacturer Part Number: AP4501AGM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4501AGM

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 28
• Rds(on) / Max(m?) Vgs@4.5v: 42
• Qg (nc): 8.4
• Qgs (nc): 1.4
• Qgd (nc): 4.7
• Id(a): 7
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

N-Channel
AP4501AGM
40
30
20
10
34
30
26
22
18
0
10
8
6
4
2
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
V
V
Reverse Diode
V
DS
T
SD
GS
1
j
4
, Drain-to-Source Voltage (V)
=150
0.4
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
o
C
T
0.6
A
=25
2
6
℃
T
0.8
I
A
D
= 25
= 5A
T
o
1
j
C
3
=25
8
V
G
o
=3.0V
1.2
C
7.0V
5.0V
4.5V
10V
1.4
4
10
1.4
1.2
1.0
0.8
0.6
0.4
40
30
20
10
1.8
1.4
1.0
0.6
0
-50
0
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
30
I
G
D
=10V
=7A
V
v.s. Junction Temperature
Junction Temperature
1
T
DS
T
j
0
0
, Junction Temperature (
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
2
-30
50
50
T
A
=150
3
℃
100
100
o
C)
o
4
C)
V
G
=3.0V
7.0V
5.0V
4.5V
10V
5
150
150
4