AP4501GSD Advanced Power Electronics Corp., AP4501GSD Datasheet - Page 2

• Manufacturer Part Number: AP4501GSD
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4501GSD

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 27
• Rds(on) / Max(m?) Vgs@4.5v: 50
• Qg (nc): 8.4
• Qgs (nc): 2.1
• Qgd (nc): 4.7
• Id(a): 7
• Pd(w): 2
• Configuration: Complementary N-P
• Package: PDIP-8

ΔBV
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
V
t
Q
N-CH Electrical Characteristics@T
Source-Drain Diode
AP4501GSD
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
rr
DSS
Symbol
Symbol
DSS
/ΔT
j
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
Parameter
Parameter
2
2
2
2
j
j
=25
=70
o
o
C)
C)
2
j
=25
V
Reference to 25℃, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
G
D
=1.7A, V
=7A, V
=7A
=1A
o
=3.3Ω,V
=15Ω
=V
=10V, I
=30V, V
=24V, V
=24V
=15V
=25V
=0V, I
=10V, I
=4.5V, I
=±20V
=4.5V
=0V
C(unless otherwise specified)
GS
Test Conditions
Test Conditions
GS
, I
D
GS
D
=250uA
=0V,
D
D
D
=250uA
GS
GS
GS
=7A
=7A
=0V
=5A
=10V
=0V
=0V
D
=1mA
Min. Typ. Max. Units
Min. Typ. Max. Units
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.03
645 800
150
12
19
95
16
10
9
2
5
6
5
4
-
-
-
-
-
-
-
-
±100
1.2
27
50
25
13
3
1
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
mΩ
mΩ
nC
nC
nC
nC
uA
uA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V