AP60T03GP Advanced Power Electronics Corp., AP60T03GP Datasheet - Page 3

• Manufacturer Part Number: AP60T03GP
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP60T03GP

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 12
• Rds(on) / Max(m?) Vgs@4.5v: 25
• Qg (nc): 11.6
• Qgs (nc): 3.9
• Qgd (nc): 7
• Id(a): 45
• Pd(w): 44
• Configuration: Single N
• Package: TO-220

100
125
100
0.1
10
75
50
25
80
60
40
20
1
0
0
0
0
2
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
T
C
=25
j
=175
V
DS
V
o
Reverse Diode
V
C
SD
1
o
, Drain-to-Source Voltage (V)
4
GS
C
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
0.5
2
6
T
j
1
=25
3
8
T
o
I
V
C
C
D
=25
G
=15A
=4.0V
8.0V
6.0V
5.0V
10V
℃
4
10
1.5
1.6
1.2
0.8
0.4
90
60
30
0
3
2
1
0
2
-50
-50
0
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
Fig 2. Typical Output Characteristics
C
=175
V
I
D
G
Junction Temperature
v.s. Junction Temperature
o
V
=20A
=10V
1
T
C
T
DS
j
j
, Junction Temperature (
, Junction Temperature (
, Drain-to-Source Voltage (V)
25
25
2
AP60T03GS/P
3
100
100
o
V
o
C)
4
C )
G
=4.0V
8.0V
6.0V
5.0V
10V
175
175
5
3