AP62T03GJ Advanced Power Electronics Corp., AP62T03GJ Datasheet - Page 3

• Manufacturer Part Number: AP62T03GJ
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP62T03GJ

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 12
• Rds(on) / Max(m?) Vgs@4.5v: 18
• Qg (nc): 11.5
• Qgs (nc): 2
• Qgd (nc): 6.8
• Id(a): 54
• Pd(w): 47
• Configuration: Single N
• Package: TO-251

120
100
80
60
40
20
16
12
0
35
25
15
8
4
0
5
0
0
2
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
=25
1
o
Reverse Diode
V
C
V
V
DS
GS
4
SD
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T
, Source-to-Drain Voltage (V)
0.4
2
j
=175
o
C
3
6
T
I
D
C
=25
= 15 A
0.8
4
o
C
T
8
j
=25
V
5
G
o
7.0V
5.0V
4.5V
10V
C
=3.0V
10
1.2
6
100
1.6
1.4
1.2
1.0
0.8
0.6
1.4
1.2
0.8
0.6
0.4
80
60
40
20
0
1
Fig 4. Normalized On-Resistance
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 6. Gate Threshold Voltage v.s.
I
V
D
G
1
= 20 A
=10V
v.s. Junction Temperature
Junction Temperature
V
T
T
2
DS
j
j
, Junction Temperature (
, Junction Temperature (
, Drain-to-Source Voltage (V)
25
25
3
4
T
AP62T03GH/J
C
= 175
5
100
100
o
C
6
o
V
o
C)
C)
G
=3.0V
7.0V
5.0V
4.5V
10V
7
175
175
8
3