AP4537GYT-HF Advanced Power Electronics Corp., AP4537GYT-HF Datasheet

AP4537GYT-HF

Manufacturer Part Number
AP4537GYT-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4537GYT-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
30
Rds(on) / Max(m?) Vgs@4.5v
48
Qg (nc)
4.5
Qgs (nc)
1
Qgd (nc)
2.5
Id(a)
7.3
Pd(w)
2.5
Configuration
Complementary N-P
Package
PMPAK 3x3
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The PMPAK
with backside heat sink.
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
®
3x3 package is smaller size and lower 1.0mm profile
Maximum Thermal Resistance, Junction-ambient
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Parameter
Parameter
1
S1
G1
3
3
S2
G2
PMPAK
®
D1/D2
3x3
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-channel
3
N-CH BV
P-CH BV
30
+20
7.3
5.8
28
G1
Halogen-Free Product
-55 to 150
-55 to 150
Rating
2.5
R
I
R
I
D
D
P-channel
D1
DS(ON)
DS(ON)
AP4537GYT-HF
DSS
DSS
Value
-5.3
-4.2
+20
-30
-20
S1
10
50
G2
30mΩ
60mΩ
201009212
-5.3A
-30V
7.3A
Units
℃/W
℃/W
30V
Unit
W
V
V
A
A
A
D2
S2
1

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AP4537GYT-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D1/ ® PMPAK 3x3 N-channel Parameter 3 AP4537GYT-HF Halogen-Free Product N-CH BV 30V DSS R 30mΩ DS(ON) I 7.3A D P-CH BV -30V DSS R 60mΩ DS(ON) I -5.3A D ...

Page 2

... AP4537GYT-HF N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... DS V =+20V =- =-15V DS V =-4. =-15V =3.3Ω =-10V =-25V DS f=1.0MHz Test Conditions 2 I =-1.2A =-4A dI/dt=-100A/µs AP4537GYT-HF Min. Typ. =-250uA - =-250uA - 1 570 ...

Page 4

... AP4537GYT-HF N-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics = Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 5

... Duty factor=0.5 100us 0.2 1ms 0.1 0.1 10ms 0.05 100ms 1s 0.02 0.01 DC Single Pulse 0.01 0.0001 10 100 Fig 10. Effective Transient Thermal Impedance V 4. d(off) f Fig 12. Gate Charge Waveform AP4537GYT-HF f=1.0MHz Drain-to-Source Voltage ( Duty factor = t/T Peak thja ...

Page 6

... AP4537GYT-HF P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 7

... Duty factor=0.5 100us 0.2 1ms 0.1 0.1 10ms 0.05 100ms 0.02 1s 0.01 DC 0.01 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance -4. d(off) f Fig 12. Gate Charge Waveform AP4537GYT-HF f=1.0MHz Drain-to-Source Voltage ( Duty factor = t/T Peak thja R = 90℃/W thja Single Pulse 0 ...

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