AP6925GY Advanced Power Electronics Corp., AP6925GY Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra lower on-resistance and cost-effectiveness

AP6925GY

Manufacturer Part Number
AP6925GY
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra lower on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP6925GY.pdf (5 pages)

Specifications of AP6925GY

Vds
-16V
Vgs
±8V
Rds(on) / Max(m?) Vgs@4.5v
150
Rds(on) / Max(m?) Vgs@2.5v
200
Qg (nc)
6
Qgs (nc)
1
Qgd (nc)
2
Id(a)
-1.6
Pd(w)
0.55
Configuration
Single P
Package
SOT-26
▼ Low Gate Charge
▼ Surface Mount Package
▼ RoHS Compliant
V
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra lower on-resistance and
cost-effectiveness.
STG
J
DS
KA
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25
=70
=25
o
o
Advanced Power
Electronics Corp.
C
C
o
C
Drain-Source Voltage
Reverse Voltage (Schottky)
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
SOT-26
3
3
K
NC
D
A
S
G
P-CHANNEL MOSFET WITH SCHOTTKY
DIODE
3
(Schottky)
3
RoHS-compliant Product
G
-55 to 125
-55 to125
Rating
BV
R
I
0.005
D
0.55
-1.6
-1.2
-16
+8
20
DS(ON)
-6
DSS
Value
180
180
AP6925GY
S
D
150mΩ
200808072
- 1.6A
-16V
o
o
Units
W/℃
Unit
C/W
C/W
W
K
o
o
A
V
V
V
A
A
A
C
C
1

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AP6925GY Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-ambient Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice RoHS-compliant Product P-CHANNEL MOSFET WITH SCHOTTKY DIODE SOT-26 A Parameter Parameter 3 3 (Schottky) AP6925GY BV -16V DSS R 150mΩ DS(ON 1. Rating Units - ...

Page 2

... AP6925GY Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... 1.2 1.0 0.8 0 -50 -25 Fig 4. Normalized On-Resistance 180 160 o = 140 120 100 1 1.2 0 Fig 6. On-Resistance vs. AP6925GY - 5 =125 . . . 2 Drain-to-Source Voltage ( 100 125 Junction Temperature ( ...

Page 4

... AP6925GY -12V -1. Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area SCHOTTKY DIODE 10 1 20V 0.1 0.01 0.001 Junction Temperature ( j Fig 1 ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : SOT- Part Marking Information & Packing : SOT-26 YDYY SYMBOLS 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Number : YD Date Code YY:2004,2008,2012… YY:2003,2007,2011… YY:2002,2006,2010… YY:2001,2005,2009… ...

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