AP70T03GJ Advanced Power Electronics Corp., AP70T03GJ Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP70T03GJ

Manufacturer Part Number
AP70T03GJ
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP70T03GH.pdf (4 pages)

Specifications of AP70T03GJ

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
9
Rds(on) / Max(m?) Vgs@4.5v
18
Qg (nc)
17
Qgs (nc)
5
Qgd (nc)
10
Id(a)
60
Pd(w)
53
Configuration
Single N
Package
TO-251

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
H&T Electronics H&T Electronics
Part Number:
AP70T03GJ
Quantity:
2 080
▼ Simple Drive Requirement
▼ Low Gate Charge
▼ Fast Switching
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP70T03GJ)
are available for low-profile applications.
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
3
-55 to 175
-55 to 175
Rating
BV
R
I
D
0.36
+20
195
30
60
43
53
G
DS(ON)
D
DSS
Value
AP70T03GH/J
S
62.5
110
2.8
G D
S
TO-252(H)
TO-251(J)
200903055
9mΩ
Units
W/℃
Units
℃/W
℃/W
℃/W
30V
60A
W
℃
℃
V
V
A
A
A
1

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AP70T03GJ Summary of contents

Page 1

... The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP70T03GJ) are available for low-profile applications. Absolute Maximum Ratings Symbol ...

Page 2

AP70T03GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I ...

Page 3

T = 150 100 50 0 0.0 1.5 3 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 60 I =20A D ℃ ...

Page 4

AP70T03GH =33A =16V DS V =20V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 =25 ...

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