AP70T03GJ-HF Advanced Power Electronics Corp., AP70T03GJ-HF Datasheet - Page 4

• Manufacturer Part Number: AP70T03GJ-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP70T03GJ-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 9
• Rds(on) / Max(m?) Vgs@4.5v: 18
• Qg (nc): 17
• Qgs (nc): 5
• Qgd (nc): 10
• Id(a): 60
• Pd(w): 53
• Configuration: Single N
• Package: TO-251

AP70T03GH/J-HF
1000
100
10
12
9
6
3
0
1
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
10%
90%
Single Pulse
V
T
V
GS
C
DS
I
=25
D
=33A
5
o
V
Q
C
V
t
DS
G
d(on)
V
DS
=16V
, Total Gate Charge (nC)
DS
V
10
1
, Drain-to-Source Voltage (V)
=20V
DS
t
r
=24V
15
20
10
t
d(off)
t
f
25
10us
100us
1ms
10ms
100ms
1s
DC
100
30
Fig10. Effective Transient Thermal Impedance
10000
1000
0.01
100
0.1
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
Duty factor = 0.5
0.01
Single Pulse
V
0.05
0.2
0.1
0.02
G
5
0.0001
V
Q
DS
GS
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
13
Q
Charge
G
GD
17
0.01
P
DM
Duty Factor = t/T
Peak T
21
j
= P
t
0.1
DM
T
f=1.0MHz
x R
25
thjc
C
C
C
+ T
Q
iss
oss
rss
C
29
1
4