AP70T03GP Advanced Power Electronics Corp., AP70T03GP Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP70T03GP

Manufacturer Part Number
AP70T03GP
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP70T03GP.pdf (4 pages)

Specifications of AP70T03GP

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
9
Rds(on) / Max(m?) Vgs@4.5v
18
Qg (nc)
16.5
Qgs (nc)
5
Qgd (nc)
10.3
Id(a)
60
Pd(w)
53
Configuration
Single N
Package
TO-220

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
H&T Electronics H&T Electronics
Part Number:
AP70T03GP
Quantity:
2 960
Data and specifications subject to change without notice
▼ Simple Drive Requirement
▼ Low Gate Charge
▼ Fast Switching Speed
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP70T03GP)
are available for low-profile applications.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
G
D
-55 to 175
-55 to 175
3
Rating
BV
R
I
S
D
0.36
+20
195
30
60
43
53
G D
DS(ON)
DSS
Value
AP70T03GS/P
2.8
40
62
S
TO-263(S)
TO-220(P)
200903053
9mΩ
Units
W/℃
Units
℃/W
℃/W
℃/W
30V
60A
W
℃
℃
V
V
A
A
A
1

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AP70T03GP Summary of contents

Page 1

... The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP70T03GP) are available for low-profile applications. Absolute Maximum Ratings Symbol ...

Page 2

AP70T03GS/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I ...

Page 3

T = 150 100 50 0 0.0 1.5 3 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage ...

Page 4

AP70T03GS =33A =16V DS V =20V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 =25 ...

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