AP72T03GJ Advanced Power Electronics Corp., AP72T03GJ Datasheet - Page 4

• Manufacturer Part Number: AP72T03GJ
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP72T03GJ

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 9
• Rds(on) / Max(m?) Vgs@4.5v: 15
• Qg (nc): 15
• Qgs (nc): 3
• Qgd (nc): 10
• Id(a): 62
• Pd(w): 60
• Configuration: Single N
• Package: TO-251

AP72T03GH/J
1000
100
10
10
1
8
6
4
2
0
0.1
0
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
90%
10%
Fig7. Gate Charge Characteristics
T
Single Pulse
V
V
I
c
GS
D
DS
=25
= 30 A
V
V
o
V
DS
C
DS
Q
V
8
DS
t
G
= 15 V
, Drain-to-Source Voltage (V)
d(on)
DS
= 18 V
, Total Gate Charge (nC)
1
= 24 V
t
r
16
10
t
d(off)
24
t
f
100us
1ms
10ms
100ms
DC
100
32
Fig 8. Typical Capacitance Characteristics
Fig10. Effective Transient Thermal Impedance
1600
1200
0.01
800
400
0.1
0.00001
0
1
1
Fig 12. Gate Charge Waveform
4.5V
0.2
0.1
0.01
0.02
Single Pulse
0.05
V
G
Duty factor=0.5
5
0.0001
V
Q
DS
GS
9
, Drain-to-Source Voltage (V)
0.001
t , Pulse Width (s)
Q
Q
13
Charge
G
GD
0.01
17
P
0.1
DM
Duty factor = t/T
Peak T
21
j
= P
t
DM
f=1.0MHz
T
x R
1
25
thjc
C
C
+ T
C
Q
oss
C
iss
rss
10
29
4