AP73T03GMT-HF Advanced Power Electronics Corp., AP73T03GMT-HF Datasheet - Page 4

• Manufacturer Part Number: AP73T03GMT-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP73T03GMT-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 9
• Rds(on) / Max(m?) Vgs@4.5v: 16
• Qg (nc): 12
• Qgs (nc): 3
• Qgd (nc): 7.5
• Id(a): 58
• Pd(w): 50
• Configuration: Single N
• Package: PMPAK 5x6

AP73T03GMT-HF
1000
100
10
10
1
8
6
4
2
0
0.01
0
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Fig 7. Gate Charge Characteristics
10%
I
90%
V
Single Pulse
V
T
D
V
DS
Operation in this
area limited by
=20A
C
GS
DS
=25
=15V
R
DS(ON)
4
o
V
Q
C
DS
0.1
t
G
d(on)
,Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
8
t
r
12
1
16
t
d(off)
10
t
20
f
100ms
100us
10ms
1ms
DC
24
100
Fig 10. Effective Transient Thermal Impedance
0.01
1000
0.1
800
600
400
200
0.00001
1
0
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
0.01
0.02
Duty factor = 0.5
0.05
Single Pulse
0.2
0.1
V
G
0.0001
5
Q
V
GS
DS
9
0.001
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
13
Charge
G
GD
0.01
17
0.1
P
DM
Duty factor = t/T
Peak T
21
j
= PDM x R
t
T
f=1.0MHz
1
25
thjc
Q
+ T
C
C
C
c
iss
oss
rss
10
29
4