AP9916GJ Advanced Power Electronics Corp., AP9916GJ Datasheet - Page 5

• Manufacturer Part Number: AP9916GJ
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9916GJ

• Vds: 18V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@4.5v: 25
• Rds(on) / Max(m?) Vgs@2.5v: 40
• Qg (nc): 17.5
• Qgs (nc): 1.2
• Qgd (nc): 7.9
• Id(a): 35
• Pd(w): 50
• Configuration: Single N
• Package: TO-251

0.01
100
0.1
16
14
12
10
10
1
8
6
4
2
0
0
0
I
Fig 9. Gate Charge Characteristics
D
=18A
5
T
j
10
=150
0.4
Q
G
Reverse Diode
o
, Total Gate Charge (nC)
15
C
V
V
DS
V
V
DS
20
=10V
DS
SD
=15V
0.8
=18V
(V)
25
T
j
=25
30
o
C
1.2
35
40
1.6
45
1000
0.95
0.45
100
1.2
0.7
0.2
10
Fig 10. Typical Capacitance Characteristics
-50
1
5
T
Junction Temperature
j
0
, Junction Temperature (
9
V
DS
50
13
(V)
AP9916GH/J
17
o
100
C )
f=1.0MHz
21
Ciss
Crss
Coss
150
25