AP9924GO Advanced Power Electronics Corp., AP9924GO Datasheet

AP9924GO

Manufacturer Part Number
AP9924GO
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9924GO

Vds
20V
Vgs
±8V
Rds(on) / Max(m?) Vgs@4.5v
20
Rds(on) / Max(m?) Vgs@2.5v
30
Qg (nc)
9
Qgs (nc)
1
Qgd (nc)
4.5
Id(a)
6.8
Pd(w)
1.38
Configuration
Single N
Package
TSSOP-8
▼ Low on-resistance
▼ Capable of 2.5V gate drive
▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
D
S2
TSSOP-8
S2
G2
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
S1
S1
G1
3
RoHS-compliant Product
G1
-55 to 150
-55 to 150
Rating
BV
R
I
D
1.38
D
6.8
5.4
20
+8
20
DS(ON)
DSS
S1
Value
90
G2
AP9924GO
2009002021
20mΩ
6.8A
Units
℃/W
20V
Unit
W
V
V
A
A
A
D
S2
1

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AP9924GO Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET TSSOP-8 D Parameter Parameter 3 AP9924GO RoHS-compliant Product BV 20V DSS R 20mΩ DS(ON Rating Units 20 +8 6.8 5.4 20 1.38 W -55 to 150 ℃ ...

Page 2

... AP9924GO Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 1 =4.5V G 1.4 1.2 1.0 0.8 0.6 5 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9924GO o 5.0V C 4.5V 3. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 o ...

Page 4

... AP9924GO =10V DS V =12V DS V =16V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) r Fig 11 ...

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