AP9926GO Advanced Power Electronics Corp., AP9926GO Datasheet
AP9926GO
Specifications of AP9926GO
Related parts for AP9926GO
AP9926GO Summary of contents
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... Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET TSSOP-8 D1 Parameter Parameter 3 AP9926GO Pb Free Plating Product BV 20V DSS R 28mΩ DS(ON Rating Units 20 ± 8 4.6 3 ...
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... AP9926GO Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 3. On-Resistance v.s. Gate Voltage 25 4.5V 4.0V 3.5V 20 3.0V 2. =2. = 2.5 3 Fig 2. Typical Output Characteristics 1 = 1.6 1.4 1.2 1.0 0.8 0 -50 AP9926GO 0 Drain-to-Source Voltage ( =4. Junction Temperature ( j Fig 4. Normalized On-Resistance v.s. Junction Temperature 4.5V 4.0V 3.5V 3.0V 2.5V V =2. =150 C C 2.5 3 100 150 C) ...
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... AP9926GO Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature 100 Single Pulse 0.01 0 (V) DS Fig 7. Maximum Safe Operating Area 1.2 0.8 0.6 0.4 0.2 100 125 150 o C) 100us 1ms 10ms 100ms 100 Fig 8. Effective Transient Thermal Impedance ...
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... T =150 0.1 0.01 0 0.4 0.8 V (V) SD Fig 11. Forward Characteristic of Reverse Diode 1000 100 Fig 10. Typical Capacitance Characteristics 1.6 1.4 1 0.8 0.6 0.4 0.2 -50 1.2 1.6 Fig 12. Gate Threshold Voltage v.s. AP9926GO f=1.0MHz ( 100 o Junction Temperature ( C ) Junction Temperature Ciss Coss Crss 29 150 ...
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... AP9926GO Fig 13. Switching Time Circuit Fig 15. Gate Charge Circuit V 90 THE DS OSCILLOSCOPE 0.5x RATED THE OSCILLOSCOPE 5V RATED d(on) r Fig 14. Switching Time Waveform ...