AP9930AGM Advanced Power Electronics Corp., AP9930AGM Datasheet

AP9930AGM

Manufacturer Part Number
AP9930AGM
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9930AGM

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
35
Rds(on) / Max(m?) Vgs@4.5v
60
Qg (nc)
6.3
Qgs (nc)
1.5
Qgd (nc)
3.5
Id(a)
5.2
Pd(w)
1.38
Configuration
Complementary N-P
Package
SO-8
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Full Bridge Application on
▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
STG
J
DS
GS
D
@T
@T
@T
LCD Monitor Inverter
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
P1G
Parameter
1
P1S/P2S
N2D/P2D
SO-8
3
3
P2G
N1G
N1D/P1D
N1S/N2S
N2G
2N AND 2P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-channel
3
+20
N-CH BV
P-CH BV
RoHS-compliant Product
30
5.2
4.1
20
N1G
P1G
-55 to 150
-55 to 150
Rating
1.38
P1N1D
R
I
R
I
D
D
P-channel
DS(ON)
DS(ON)
N1S
DSS
DSS
P1S
Value
+20
-3.5
-2.8
-30
-20
90
AP9930AGM
N2S
P2S
P2N2D
201004261
35mΩ
72mΩ
-3.5A
-30V
Units
℃/W
30V
5.2A
Unit
N2G
W
P2G
V
V
A
A
A
1

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AP9930AGM Summary of contents

Page 1

... Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET P2G N2D/P2D P1S/P2S P1G N2G N1S/N2S N1D/P1D SO-8 N1G N-channel Parameter 3 AP9930AGM RoHS-compliant Product N-CH BV 30V DSS R 35mΩ DS(ON) I 5.2A D P-CH BV -30V DSS R 72mΩ DS(ON) I -3.5A D ...

Page 2

... AP9930AGM N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... DS V =+20V =- =-15V DS V =-4. =-15V =3.3Ω =-10V =-25V DS f=1.0MHz Test Conditions 2 I =-1.2A =-3A dI/dt=100A/µs AP9930AGM Min. Typ. - =-250uA - 6 520 - 120 - 70 Min ...

Page 4

... AP9930AGM N-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.1 0.3 0.5 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 5

... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 0.01 0.01 100ms 1s DC 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance V 4. d(off) f Fig 12. Gate Charge Waveform AP9930AGM f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. Single Pulse Duty factor = t/T Peak T ...

Page 6

... AP9930AGM P-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.1 0.3 0.5 0.7 -V ,Source-to-Drain Voltage (V) SD Fig 5 ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 0.01 100ms 1s DC 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance V -4. d(off) f Fig 12. Gate Charge Waveform AP9930AGM f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.01 T Single Pulse Duty factor = t/T Peak T ...

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