AP9930GM-HF Advanced Power Electronics Corp., AP9930GM-HF Datasheet - Page 4

• Manufacturer Part Number: AP9930GM-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9930GM-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 33
• Rds(on) / Max(m?) Vgs@4.5v: 60
• Qg (nc): 7
• Qgs (nc): 2
• Qgd (nc): 4
• Id(a): 5.5
• Pd(w): 1.38
• Configuration: Complementary N-P
• Package: SO-8

N-Channel
AP9930GM-HF
10.00
1.00
0.10
0.01
25
20
15
10
45
40
35
30
25
5
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
2
0.1
0
Fig 5. Forward Characteristic of
T
A
T
=25
j
V
=150
0.3
1
V
SD
Reverse Diode
o
V
C
DS
GS
, Source-to-Drain Voltage (V)
4
o
, Drain-to-Source Voltage (V)
C
, Gate-to-Source Voltage (V)
0.5
2
0.7
3
6
T
I
T
A
D
=25
j
=25
=3A
0.9
4
℃
o
C
8
V
1.1
G
5
=3.0V
8.0V
6.0V
4.0V
10V
1.3
6
10
20
15
10
1.6
1.4
1.2
1.0
0.8
0.6
1.8
1.6
1.4
1.2
5
0
Fig 2. Typical Output Characteristics
2
1
-50
-50
0
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
A
V
I
=150
G
D
V
=10V
=5A
1
DS
T
v.s. Junction Temperature
Junction Temperature
o
j
C
, Drain-to-Source Voltage (V)
T
, Junction Temperature (
0
0
j
,Junction Temperature (
2
50
3
50
4
o
100
C)
100
V
o
C)
G
5
=3.0V
8.0V
6.0V
4.0V
10V
150
6
150
4