AP9936GM-HF Advanced Power Electronics Corp., AP9936GM-HF Datasheet

AP9936GM-HF

Manufacturer Part Number
AP9936GM-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9936GM-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
50
Rds(on) / Max(m?) Vgs@4.5v
80
Qg (nc)
6.1
Qgs (nc)
1.4
Qgd (nc)
3.3
Id(a)
5
Pd(w)
2
Configuration
Dual N
Package
Dual N

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP9936GM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ DC-DC Application
▼ Dual N-channel Device
▼ Surface Mount Package
▼ RoHS Compliant
Data and specifications subject to change without notice
V
V
I
I
I
P
T
T
Rthj-a
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
D1
1
D1
SO-8
D2
3
3
D2
S1
G1
S2
G2
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
3
G1
Halogen-Free Product
-55 to 150
-55 to 150
Rating
BV
R
I
0.016
D
+20
30
20
DS(ON)
5
4
2
AP9936GM-HF
DSS
Value
62.5
S1
D1
G2
200901203
50mΩ
Units
W/℃
℃/W
30V
Unit
5A
W
V
V
A
A
A
D2
S2
1

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AP9936GM-HF Summary of contents

Page 1

... Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 Parameter Parameter 3 AP9936GM-HF Halogen-Free Product BV 30V DSS R 50mΩ DS(ON Rating Units ...

Page 2

... AP9936GM-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 1 =10V ℃ GS 1.6 1.4 1.2 1 0.8 0.6 - Fig 4. Normalized On-Resistance 2 1.5 1 0.5 1.6 -50 Fig 6. Gate Threshold Voltage v.s. AP9936GM-HF 10V o C 8.0V 6.0V 4.0V V =3. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

Page 4

... AP9936GM- Total Gate Charge (nC) G Fig7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area t V d(on) DS 90% 10 Fig 11. Switching Time Waveform 1000 100 ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : SO Part Marking Information & Packing : SO-8 9936GM YWWSSS SYMBOLS α A 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Number Package Code ...

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