AP86T03GJ Advanced Power Electronics Corp., AP86T03GJ Datasheet - Page 3

• Manufacturer Part Number: AP86T03GJ
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP86T03GJ

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 6.5
• Rds(on) / Max(m?) Vgs@4.5v: 11
• Qg (nc): 25
• Qgs (nc): 5.6
• Qgd (nc): 17
• Id(a): 75
• Pd(w): 75
• Configuration: Single N
• Package: TO-251

250
200
150
100
12
10
40
30
20
10
50
8
6
4
0
0
0.0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
=25
0.2
o
V
Reverse Diode
1.0
C
V
DS
V
GS
4
SD
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
0.4
T
j
2.0
=175
0.6
6
o
C
I
T
D
C
3.0
=30A
=25
0.8
o
C
8
V
4.0
T
G
1
j
= 4.0 V
=25
7.0 V
5.0 V
6.0V
10V
o
C
5.0
1.2
10
120
100
2.0
1.6
1.2
0.8
0.4
1.6
1.2
0.8
0.4
0.0
80
60
40
20
0
0.0
Fig 4. Normalized On-Resistance
-50
-50
Fig 2. Typical Output Characteristics
Fig 6. Gate Threshold Voltage v.s.
V
I
D
G
=45A
=10V
v.s. Junction Temperature
Junction Temperature
T
0
0
V
j
2.0
DS
T
, Junction Temperature (
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
T
C
50
50
=175
4.0
o
C
AP86T03GH/J
100
100
6.0
o
C)
150
150
o
V
C)
G
7 .0V
6.0V
5.0 V
10V
=4.0V
8.0
200
200
3