AP9402GYT-HF Advanced Power Electronics Corp., AP9402GYT-HF Datasheet - Page 4

• Manufacturer Part Number: AP9402GYT-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9402GYT-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 18
• Rds(on) / Max(m?) Vgs@4.5v: 30
• Qg (nc): 5.7
• Qgs (nc): 1.8
• Qgd (nc): 3.5
• Id(a): 11.5
• Pd(w): 3.57
• Configuration: Single N
• Package: PMPAK 3x3

AP9402GYT-HF
0.01
100
10
0.1
10
8
6
4
2
0
1
0.01
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Maximum Safe Operating Area
10%
90%
V
I
Operation in this area
V
Single Pulse
limited by R
V
D
DS
T
GS
= 10 A
DS
A
=15V
=25
2
DS(ON)
V
Q
o
DS
0.1
C
t
G
d(on)
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
4
t
r
6
1
8
t
d(off)
10
t
f
10
100ms
100us
10ms
1ms
DC
1s
100
12
Fig 10. Effective Transient Thermal Impedance
0.01
800
600
400
200
0.1
0
1
0.0001
Fig 8. Typical Capacitance Characteristics
1
4.5V
Fig 12. Gate Charge Waveform
0.01
0.1
0.05
0.02
Duty factor=0.5
0.2
V
Single Pulse
0.001
G
5
Q
V
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
13
0.1
Charge
G
GD
17
1
P
DM
Duty factor = t/T
Peak T
R
thia
21
10
=85 ℃/W
j
= P
t
DM
f=1.0MHz
T
x R
100
25
thja
C
C
C
+ T
Q
oss
rss
iss
a
1000
29
4