AP9408AGI Advanced Power Electronics Corp., AP9408AGI Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP9408AGI

Manufacturer Part Number
AP9408AGI
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9408AGI

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
10
Rds(on) / Max(m?) Vgs@4.5v
15
Qg (nc)
10
Qgs (nc)
2.3
Qgd (nc)
5.6
Id(a)
53
Pd(w)
29.7
Configuration
Single N
Package
TO-220CFM
▼ Fast Switching Performance
▼ Single Drive Requirement
▼ Full Isolation Package
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
-55 to 150
-55 to 150
Rating
BV
R
I
G
D
29.7
+20
160
30
53
33
DS(ON)
D
DSS
S
Value
4.2
65
AP9408AGI
TO-220CFM(I)
10mΩ
200810282
Units
Units
℃/W
℃/W
30V
53A
W
V
V
A
A
A
1

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AP9408AGI Summary of contents

Page 1

... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9408AGI RoHS-compliant Product BV 30V DSS R 10mΩ DS(ON) I 53A TO-220CFM(I) S Rating Units 30 ...

Page 2

... AP9408AGI Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.0 I =30A D V =10V G 1.6 1.2 0.8 0.31 0.4 10 -50 Fig 4. Normalized On-Resistance 1 0.8 0.6 0.4 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. AP9408AGI 10V o C 7.0V 6.0V 5.0V V =4. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 ...

Page 4

... AP9408AGI =15V =20V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220CFM E E φ φ Part Marking Information & Packing : TO-220CFM LOGO 9408AGI YWWSSS YWWSSS Part Number Package Code Meet Rohs requirement for low voltage MOSFET only Date Code (YWWSSS) Y: ...

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