AP9408AGM-HF Advanced Power Electronics Corp., AP9408AGM-HF Datasheet - Page 3

• Manufacturer Part Number: AP9408AGM-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9408AGM-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 10
• Rds(on) / Max(m?) Vgs@4.5v: 15
• Qg (nc): 9
• Qgs (nc): 2
• Qgd (nc): 4.5
• Id(a): 12.5
• Pd(w): 2.5
• Configuration: Single N
• Package: SO-8

50
40
30
20
10
10
0
14
13
12
11
10
8
6
4
2
0
9
8
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
2
V
0.2
V
SD
V
Reverse Diode
T
GS
DS
j
, Source-to-Drain Voltage (V)
=150
4
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
0.4
1
o
C
T
A
=25
0.6
6
o
I
T
C
D
A
= 12.5 A
=25
0.8
2
℃
T
j
8
=25
V
G
1
= 4.0 V
o
7.0 V
6.0 V
5.0 V
C
10V
1.2
3
10
50
40
30
20
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
1.0
0.8
0.6
0
0
-50
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
I
V
A
D
= 150
G
=12.5A
=10V
v.s. Junction Temperature
Junction Temperature
0
V
T
o
C
T
j
DS
0
0
, Junction Temperature (
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
1
AP9408AGM-HF
50
50
1
100
o
100
C)
V
o
2
C)
G
= 4 .0 V
6 .0 V
7.0 V
5.0 V
10V
150
150
2
3