AP9408CGM-HF Advanced Power Electronics Corp., AP9408CGM-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP9408CGM-HF

Manufacturer Part Number
AP9408CGM-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9408CGM-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
8
Rds(on) / Max(m?) Vgs@4.5v
13
Qg (nc)
16
Qgs (nc)
1.7
Qgd (nc)
5.5
Id(a)
14
Pd(w)
2.5
Configuration
Single N
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP9408CGM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
D
D
DM
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
D
SO-8
D
D
D
S
S
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
G
3
Halogen-Free Product
-55 to 150
-55 to 150
Rating
BV
R
I
G
D
11.2
+20
AP9408CGM-HF
2.5
30
14
50
DS(ON)
DSS
Value
50
D
S
200908211
8mΩ
Units
℃/W
30V
14A
Unit
W
V
V
A
A
A
1

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AP9408CGM-HF Summary of contents

Page 1

... Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 Parameter Parameter 3 AP9408CGM-HF Halogen-Free Product BV 30V DSS R 8mΩ DS(ON) I 14A Rating Units ...

Page 2

... AP9408CGM-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 1 =10V G 1.4 0.9 0 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 = 1.2 0.8 0.4 0.0 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9408CGM- 150 7.0 V 6 =4. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 o ...

Page 4

... AP9408CGM- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS( Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...

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