AP9408GJ Advanced Power Electronics Corp., AP9408GJ Datasheet - Page 3

• Manufacturer Part Number: AP9408GJ
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9408GJ

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 10
• Rds(on) / Max(m?) Vgs@4.5v: 15
• Qg (nc): 13
• Qgs (nc): 2.2
• Qgd (nc): 7
• Id(a): 57
• Pd(w): 53.6
• Configuration: Single N
• Package: TO-251

120
100
14
12
10
80
60
40
20
30
20
10
8
6
0
0
0.0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
V
Reverse Diode
V
GS
V
DS
1.0
4
SD
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
0.4
T
j
=175
2.0
6
o
T
C
I
T
C
D
C
=25
=20A
=25
0.8
o
o
C
C
3.0
8
T
V
j
G
=25
7.0 V
5.0V
4.5 V
= 3.0 V
10V
o
C
4.0
1.2
10
2.0
1.6
1.2
0.8
0.4
1.6
1.2
0.8
0.4
0.0
100
80
60
40
20
0
-50
Fig 4. Normalized On-Resistance
0.0
-50
Fig 2. Typical Output Characteristics
Fig 6. Gate Threshold Voltage v.s.
V
I
D
G
=30A
=10V
v.s. Junction Temperature
Junction Temperature
V
0
0
T
T
DS
2.0
j
j
, Junction Temperature (
, Junction Temperature (
, Drain-to-Source Voltage (V)
50
50
4.0
T
C
=175
100
100
AP9408GH/J
o
C
6.0
o
o
C)
C)
150
150
V
G
7 .0V
5.0V
4.5 V
10V
=3.0V
8.0
200
200
3