AP9412AGI Advanced Power Electronics Corp., AP9412AGI Datasheet - Page 3

• Manufacturer Part Number: AP9412AGI
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9412AGI

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 6
• Rds(on) / Max(m?) Vgs@4.5v: 8
• Qg (nc): 21
• Qgs (nc): 3.6
• Qgd (nc): 12
• Id(a): 68
• Pd(w): 34.7
• Configuration: Single N
• Package: TO-220CFM

250
200
150
100
30
20
10
8
7
6
5
4
50
0
0
2
Fig 3. On-Resistance v.s. Gate Voltage
0
0
Fig 1. Typical Output Characteristics
Fig 5. Forward Characteristic of
T
C
0.2
V
=25
V
V
SD
Reverse Diode
DS
GS
4
o
1
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
C
, Gate-to-Source Voltage (V)
0.4
T
j
=150
o
0.6
6
2
C
T
I
D
C
=25
= 30 A
0.8
o
C
8
3
T
V
j
=25
1
G
=4.0V
7.0V
6.0V
5.0V
10V
o
C
1.2
10
4
2.0
1.6
1.2
0.8
0.4
120
100
1.6
1.2
0.8
0.4
80
60
40
20
0
0
-50
-50
Fig 6. Gate Threshold Voltage v.s.
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
I
V
D
G
=40A
=10V
0.31
1
v.s. Junction Temperature
Junction Temperature
V
T
DS
T
0
0
j
j
, Drain-to-Source Voltage (V)
,Junction Temperature (
, Junction Temperature (
2
T
C
=150
50
50
3
o
C
AP9412AGI
4
100
100
o
V
o
C)
C)
G
=4.0V
5
7.0V
6.0V
5.0V
10V
t
Q
rr
rr
150
150
6
3