AP9412AGM Advanced Power Electronics Corp., AP9412AGM Datasheet
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AP9412AGM
Specifications of AP9412AGM
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AP9412AGM Summary of contents
Page 1
... Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 AP9412AGM RoHS-compliant Product BV 30V DSS R 6mΩ DS(ON) I 16A Rating Units 30 +20 16 12.8 50 2.5 ...
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... AP9412AGM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
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... Fig 2. Typical Output Characteristics 2 =10V G 1.6 1.2 0.8 0.4 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1.2 1 0.8 0.6 0.4 0.2 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9412AGM 10V 150 C A 7.0 V 6 Drain-to-Source Voltage ( 100 Junction Temperature ( ...
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... AP9412AGM =18V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...