AP9451GG Advanced Power Electronics Corp., AP9451GG Datasheet

AP9451GG

Manufacturer Part Number
AP9451GG
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9451GG

Vds
-20V
Vgs
±12V
Rds(on) / Max(m?) Vgs@4.5v
135
Rds(on) / Max(m?) Vgs@2.5v
240
Qg (nc)
5.5
Qgs (nc)
1
Qgd (nc)
2.5
Id(a)
-2.3
Pd(w)
1.25
Configuration
Single P
Package
SOT-89

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP9451GG
Manufacturer:
APEC/富鼎
Quantity:
20 000
Part Number:
AP9451GG-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Capable of 2.5V Gate Drive
▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, ultra low
on-resistance and cost-effectiveness.
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
G
D
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
3
RoHS-compliant Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
1.25
0.01
- 20
-2.3
-1.9
+12
-12
DS(ON)
SOT-89
DSS
Value
100
D
AP9451GG
G
135mΩ
201106303
- 2.3A
-20V
D
Units
W/℃
℃/W
Unit
D
W
V
V
A
A
A
S
1

Related parts for AP9451GG

AP9451GG Summary of contents

Page 1

... T Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter 3 AP9451GG RoHS-compliant Product BV -20V DSS R 135mΩ DS(ON 2. SOT-89 G Rating Units - 20 +12 -2 ...

Page 2

... AP9451GG Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... I = -2. -10V I =-1. ℃ T =25 A 1.6 ±12 1.2 0.8 0 -50 Fig 4. Normalized On-Resistance 1.5 1.0 o 0.5 0.0 -50 1.1 1.3 Fig 6. Gate Threshold Voltage v.s. AP9451GG -10V o T =150 - -4. - Drain-to-Source Voltage ( 100 Junction Temperature ( C) j 100 0 50 100 Junction Temperature ( ...

Page 4

... AP9451GG -2. -15V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 10 Operation in this area limited by R DS(ON) 1 0.1 ℃ T =25 A Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area - ...

Related keywords