AP9T18GJ Advanced Power Electronics Corp., AP9T18GJ Datasheet
AP9T18GJ
Specifications of AP9T18GJ
Related parts for AP9T18GJ
AP9T18GJ Summary of contents
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Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Capable of 2.5V gate drive ▼ Surface mount package Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance ...
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AP9T18GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current ...
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T = 100 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ...
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AP9T18GH =18A =10V DS V =12V =16V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 10 ...
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... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 (0.1mm A3 Part Marking Information & Packing : TO-252 9T18GH YWWSSS 0.127~0.381 C Part Number LOGO Date Code (YWWSSS) Millimeters SYMBOLS MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 F 2.20 2.63 3.05 F1 0.5 0.85 E1 5.10 5.70 6.30 E2 0.50 1.10 1. ...
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... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-251 Part Marking Information & Packing : TO-251 9T18GJ LOGO YWWSSS Part Number Date Code (YWWSSS) Y :Last Digit Of The Year WW :Week SSS :Sequence Millimeters SYMBOLS MIN NOM MAX A 2.20 2.30 2.40 A1 0.90 1.20 1.50 B1 0.50 0.69 0.88 B2 ...