AP4503GM Advanced Power Electronics Corp., AP4503GM Datasheet

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... Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 N-channel Parameter 3 AP4503GM RoHS-compliant Product N-CH BV 30V DSS R 28mΩ DS(ON) I 6.9A D P-CH BV -30V DSS R 36mΩ DS(ON) I -6. ...

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... AP4503GM N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ∆BV /∆T Breakdown Voltage Temperature Coefficient DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... DS V =-4. =-15V =3.3Ω, =15Ω = =-25V DS f=1.0MHz Test Conditions 2 I =-6A =-6A dI/dt=-100A/µs AP4503GM Min. Typ. -30 - =-1mA - -0.004 =-6A - 5 =-10V ...

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... AP4503GM N-Channel 100 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 V ...

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... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 0.01 100ms 1s 10s DC 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance V 4. d(off) f Fig 12. Gate Charge Waveform AP4503GM f=1.0MHz C iss C oss C rss Drain-to-Source Voltage (V) DS Dity factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse t -6 ...

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... AP4503GM P-Channel 100 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

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... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 100ms 0.01 1s 10s DC 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance V -4. d(off) f Fig 12. Gate Charge Waveform AP4503GM f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0.01 -6 Single Pulse ...