AP2609GYT-HF Advanced Power Electronics Corp., AP2609GYT-HF Datasheet
AP2609GYT-HF
Specifications of AP2609GYT-HF
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AP2609GYT-HF Summary of contents
Page 1
... J Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter 3 AP2609GYT-HF Halogen-Free Product BV -20V DSS R 18mΩ DS(ON) I -11. ® ...
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... AP2609GYT-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... Fig 2. Typical Output Characteristics 2 =-4.5V G 1.6 1.2 0.8 0 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 0.0 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP2609GYT-HF o -5. 150 C A -4.5V -3.5V -2. -1. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 ...
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... AP2609GYT- - Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS( Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...