AP83T03GMT-HF Advanced Power Electronics Corp., AP83T03GMT-HF Datasheet - Page 3

AP83T03GMT-HF

Manufacturer Part Number
AP83T03GMT-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP83T03GMT-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
6
Rds(on) / Max(m?) Vgs@4.5v
11
Qg (nc)
19
Qgs (nc)
4
Qgd (nc)
11
Id(a)
72
Pd(w)
50
Configuration
Single N
Package
PMPAK 5X6
160
120
80
40
10
40
30
20
10
0
9
8
7
6
5
4
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
2
V
Reverse Diode
DS
V
V
0.4
4
SD
, Drain-to-Source Voltage (V)
GS
T
T
C
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
4
=25
j
=150
o
C
o
C
0.8
6
6
I
T
D
C
=20A
=25
T
8
j
o
=25
C
1.2
8
o
V
C
10
G
= 4.0V
7.0V
6.0V
5.0V
10V
1.6
10
12
2.0
1.6
1.2
0.8
0.4
1.6
1.2
0.8
0.4
0.0
120
100
80
60
40
20
0
-50
Fig 4. Normalized On-Resistance
-50
0
Fig 2. Typical Output Characteristics
Fig 6. Gate Threshold Voltage v.s.
V
I
D
G
=20A
=10V
v.s. Junction Temperature
Junction Temperature
V
2
DS
T
T
0
0
j
, Drain-to-Source Voltage (V)
j
, Junction Temperature (
, Junction Temperature (
T
4
AP83T03GMT-HF
C
=150
50
50
o
C
6
100
100
o
o
C)
V
8
C)
G
=4.0V
7.0V
6.0V
5.0V
10V
150
10
150
3

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